集成电路锁定效应和试验方法标准研究
Research on Latch up Effect of CMOS Integrated Circuits and Test
Method Standards
摘 要 针对CMOS 集成电路的锁定效应,论述集成电路锁定效应的产生机制和失效机理,对目前国际上各大标准化组织发布实施的锁定试验方法标准进行对比分析,详细阐述JEDEC 的JESD 78 号标准的技术内容,包括试验分类、试验程序、试验方法、DUT 偏置条件、脉冲触发条件、失效判据和抽样要求。
关键词 集成电路 锁定 标准
Abstract: For latch up effect of CMOS integrated circuits,this article discussed integrated
circuits' latch up generation and failure mechanism, carried out a comparative analysis on
the relevant latch up test method standards of the major international standardization
organization, and explained JESD78 standard's technical content, including classification
test procedure, test method, test DUT bias conditions, pulse trigger condition, failure
criterion and sampling requirements.
Keywords: integrated circuit; latch up; standard